Observation of electronic Raman scattering from Mg-doped wurtzite GaN
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منابع مشابه
Second order Raman spectroscopy of the wurtzite form of GaN
We report on Raman scattering by phonon pairs in GaN films grown on sapphire substrates by plasma-enhanced molecular beam epitaxy. The first order data are consistent with results obtained from GaN bulk crystals of the wurtzite structure. The Al and the much weaker E2 symmetry components of the second order scattering have been identified. Two-phonon spectra are dominated by contributions due t...
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Infrared reflection and Raman spectroscopies have been employed to derive zone center and some zone boundary phonon energies in wurtzite and in zincblende GaN (Table 1.) [1-10]. Phonon and coupled modes have been employed to characterize stress conditions and carrier densities in thin films and device structures. Due to the wide bandgap non-resonant Raman scattering is easily performed using vi...
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Low-temperature photoluminescence (PL) and optically detected magnetic resonance (ODMR) at 24GHz have been performed on a series of MBE-grown Mg-doped (10–10 cm ) GaN homoepitaxial layers. High-resolution PL at 5K revealed intense bandedge emission with narrow linewidths (0.2–0.4meV) attributed to annihilation of excitons bound to shallow Mg acceptors. In contrast to many previous reports for G...
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In this research, the interactions of HCN gas with pristine, Ga-, N- and GaN-doped of boron phosphide nanotube (BPNTs) were investigated by using density function theory (DFT). The structure, electrical and NQR parameters, quantum descriptors involving energy gap, global hardness, global softness, electrophilicity, electronic chemical potential and electronegativity were calculated. The adsorpt...
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Wurtzite structure gallium nitride (GaN) thin film was grown on a c-plane sapphire (0001) substrate through spin coating method followed by nitridation process. Readily available and cheap gallium (III) nitrate hydrate (Ga(NO3)3·xH2O) powder was used as the gallium source. Besides that, ethanol-based precursor solution which has better wetting properties and fast evaporation rate was prepared. ...
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تاریخ انتشار 2014